Spring 2006 Lecture notes for EE 5/410 Integrated
Circuit Physical Design
http://coeneval.boisestate.edu/
please do the course evaluation at this link.
Final exam is open book and closed notes (comprehensive) Monday, May 8, from 1 to 3 pm in room ET 103
May 7 – Study session in MEC 114 at 2:00 pm. notes3.pdf
May 5 – lec40_ee5410.pdf – review for the final exam
May 3 – lec39_ee5410.pdf – setup, hold time (continue), brief introduction to dynamic circuits
May 1 – lec38_ee5410.pdf – projects due, continue discussing clocked circuits
April 28 – lec37_ee5410.pdf – discuss projects (again!), continue with clocked circuits
April 26 – lec36_ee5410.pdf – discuss projects
April 24 – lec35_ee5410.pdf – clocked circuits, setup and hold time
April 21 – lec34_ee5410.pdf – Dickson charge up, answer student questions
April 19 – lec33_ee5410.pdf – discuss projects
April 17 – lec32_ee5410.pdf – charge pump design and operation, an overview
April 14 – lec31_ee5410.pdf – Static logic gates
April 12 – lec30_ee5410.pdf – LASI examples, review the inverter
April 10 – lec29_ee5410.pdf – sizing devices for driving capacitive loads (buffer design)
April 7 – lec28_ee5410.pdf – discuss inverter DC and transient behavior, ring oscillators
April 5 – lec27_ee5410.pdf – review midterm2
April 3 – Midterm
2 in MP201 (same room as last time)
from 12:40 to 1:30 (normal class time).
April 2 – Study session in MEC 114 at 2:00 pm. notes2.pdf
March 25 to Sunday, April 2 is the spring break from instruction
March 24 – lec26_ee5410.pdf – finish Ch. 10 and review for exam
March 22 – lec25_ee5410.pdf – delay calculations, pass gates
March 20 – lec24_ee5410.pdf – Models for digital design
March 17 – lec23_ee5410.pdf – scaling, short-channel effects, review of Ch. 6
March 15 – lec22_ee5410.pdf – subthreshold, Ion, Ioff
March 13 – No lecture
March 10 – lec21_video – CMOS fabrication, Sec. 7.2, Dr. Jessing
March 8 – lec20_ee5410.pdf – finish IV derivations, electrical length, CLM, CGS
March 6 – lec19_ee5410.pdf – IV characteristics of MOSFETs
March 3 – lec18_ee5410.pdf – MOSFET threshold voltage derivation
March 1 – lec17_ee5410.pdf – review midterm1, start on Ch. 6
February 27 – Midterm1 in the multipurpose classroom building room
MP201 from 12:40 to 1:30 (normal class time).
February 26 – Study session in MEC 114 at 2:00 pm. notes1.pdf
February 24 - lec16_ee5410.pdf – exam review
February 22 - lec15_ee5410.pdf – resistor temp co, more examples, NRD/NRS
February 17 - lec14_ee5410.pdf – LASI example for LVS
February 15 - lec13_ee5410.pdf – more layout, MOSFET capacitances, standard cell frames
February 13 - lec12_ee5410.pdf – review layers, PMOS and NMOS layout
February 10 - lec11_ee5410.pdf – poly layers, MOSFET formation, silicide
February 8 - lec10_ee5410.pdf – introduction to the active, select (implant)
February 6 - lec9_ee5410.pdf – electromigration, via parasitic R, ground and VDD bounce
February 3 - lec8_ee5410.pdf – layout with LASI, examples
February 1 - lec7_ee5410.pdf – metal layers, vias, parasitics, delay, bond pads
January 30 - lec6_ee5410.pdf – diffusion capacitance and reverse recovery time
January 27 - lec5_ee5410.pdf – depletion capacitance and delay
January 25 - lec4_ee5410.pdf – n-well sheet resistance, introduction to depletion capacitance
January 23 - lec3_ee5410.pdf – intro to WinSPICE, n-well, patterning, layout, sheet resistance
January 20 - lec2_ee5410.pdf – LASI layout examples
January 18 - lec1_ee5410.pdf – course introduction, layout and cross-sectional views