Lecture notes EE 5/410

Spring 2007 Lecture notes for EE 5/410 Integrated Circuit Physical Design

http://coeneval.boisestate.edu/ please do the course evaluation at this link.

April 30 – lec24_ee5410.pdf – project discussions and review

April 25 – lec23_ee5410.pdf – flip-flops, latches, setup and hold times

April 23 – lec22_ee5410.pdf – briefly review exams, discuss projects

April 18 – midterm2, closed book and notes covering chapters 6, 10, and 11

April 16 – lec21_ee5410.pdf – Gates, the transmission gate (TG), charge pumps, review for the exam

April 11 – lec20_ee5410.pdf – buffer design for large capacitive loads

April 9 – lec19_ee5410.pdf – ring oscillators, start on buffers for large capacitive loads

April 4 – lec18_ee5410.pdf – more inverter discussions, using the inverter as an amplifier, noise margins

April 2 – lec17_ee5410.pdf – delay calculations and examples, start the inverter

March 26 and 28 – spring break from instruction

March 21 – lec16_ee5410.pdf – on and off currents, velocity saturation, why a device in a small process won’t behave like a long-channel device

March 19 – lec15_ee5410.pdf – models for digital design, Ch. 10

March 14 – lec14_ee5410.pdf – review IV equation derivations, CLM, Cgs calculation

March 12 – lec13_ee5410.pdf – MOSFET threshold voltage and IV equations

March 7 – lec12_ee5410.pdf – review exam, start chapter 6 on MOSFET operation

March 5 – midterm1, closed-book and notes covering chapters 1-5

March 4 – review session, MEC 114 at 3 pm, notes1.pdf

February 28 – lec11_ee5410.pdf – review for the exam

February 26 – lec10_ee5410.pdf – temperature behavior of resistors, layout of capacitors

February 21 – lec9_ee5410.pdf – silicide block, poly resistors, lateral diffusion, oxide capacitance

February 14 – lec8_ee5410.pdf – Field devices, MOSFET formation, process cross-sections

February 7 – lec7_ee5410.pdf – discussions of active, selects, poly

February 5 – lec6_ee5410.pdf – more discussions on the metal layers including electromigration and sizing

January 31 – lec5_ee5410.pdf – finish n-well, discuss metal layers

January 29 – lec4_ee5410.pdf – n-well delay, diffusion capacitance of a forward biased diode

January 24 – lec3_ee5410.pdf – n-well fabrication, layout, depletion C (bottom and sidewall), pn-junction

January 22 – lec2_ee5410.pdf – intro to chip production steps, begin n-well layer

January 17 – lec1_ee5410.pdf – course introduction and setting up the CAD tools