Lab 6 - ECE 421L

Authored by Michael Villalba

villalb5@unlv.nevada.edu

1008445138,

10/20/2014

Design, Layout, and Simulatation of a CMOS NAND gate, XOR gate, and Full-Adder.

First thing we are going to do is use the inverter that was created in Lab 5. Also from Tutorial_4 we drafted a chematic of a NAND gate.

Then we have to ceate a Layout for the NAND gate

Then we have to extract the layout and perform an LVS to make sure they match

Then we have to create a schematic, symbol and layout for a XOR gate with 6u/0.6u MOSFET

Same as the NAND gate we need to create a layout and extract the layer then LVS to make sure it matches the schematic. This layout is more complex than the NAND gate we created previously.

We are now going to simulate all the gates we created to make sure they work. the schematic used to simulate them can be seen below. We use pulse A and pulse, B whos frequency is twice as fast as A to simulate inputs 00,01,10,11

It is important to realize there is a rise time and a fall time in this switching between signals. If we look at around the 200 ns mark we can see a glitch, that is because the numbers are in transition from 01 to 10 but what in between that time the computer is only reading 00, so 0 or 0 is zero as seen in this glitch.
First thing to do is to create a schematic of the full-adder and then the symbol.

After creating the schematic and symbol for the full-adder we then have to create a layout, extract the layout and then LVS the schematic and extract to make sure they match.

Last thing we have to do is simulate the full adder to make sure its complete.

Here is proof of me backing up my work

lab6 can be downloaded here

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